April 4, 2017

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Phys. Lett. 50, 1237 ( 1987) / 27 / M. Nakayama, K. Kubota, H. Kato, S. Chika, and N. Sano, Solid State Commun. 2l, 493 (1985) / 28 / T. S. Jiang, and K. Ploog, Appl. phys. A 43, 75 (1987) / 29 / T. Nakayama and H. Kamimura, J. Phys. Soc. Jpn. A. Gell, D. Ninno, M. C. Herbert, Phys. Rev. B 34, 2416 (1986) / 31 / J. Nagle, M. Gaxriga, W. Stolz, T. Isu, and K. Ploog, Proc. 3rd Int. Conf. Modulated Semicond. Structures (MSS-III), Montpellier 1987, J. Physique Colloque, to be published (1988) / 32 / E.

53As wells of LZ = 200)\. 2834 A is used as X-Ray source. : 5. This is rarely observed and underlines the excellent structural quality of the sample under study. The n = 0 satellite, attributed to the (400) Bragg diffraction of the mean parameter of the superlattice appears at the position of the InP substrate peak. This indicates that the lattice parameter of the ternary alloy is well adapted to that of the substrate. J ~ ~ 259 26 262 Fig. 3. 53As/lnp superlattice grown by LP-filOCVD. From the angle /\ 6 using the classical superperiodici ty LB+LZ expected value from the = 360" between two adjacent satellites, we deduce, expression 1 LB + LZ A /2/\ 6 cos 6 the = 410 that corresponds quite well to the A growth parameters.

In addition, as pointed out by Ihm / 34 / , the X state of this model (where Z represents the direction of layer sequence }zis always located at lower energy than the X state due to the lower transverse effective mass at the X point. The d~ of Fig. e. (m + n) ~ 6, the alloy approximation is probably the most adequate model which predicts the position and the type of the band gap quite accurately. For the calculated curves of Fig. 129 xA1 2. The r and X gaps of the ultrathin-~ayer (GaAs) (AlAs) superlattices with (m + n) < 6 are very close to those of the co~responaing ternary alloy.

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